0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features low current (max. 100 ma). low voltage (max. 45 v). low noise. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma total power dissipation p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient * r th j-a 500 k/w * transistor mounted on an fr4 printed-circuit board. sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors BCW71,bcw72 product specification 4008-318-123
smd type ic smd type transistors electrical characteristics ta = 25 symbol testconditons min typ max unit i cbo i e =0;v cb =20v 100 na i cbo i e =0;v cb =20v;t j =100 10 a i ebo i c =0;v eb =5v 100 a BCW71 90 bcw72 150 BCW71 110 120 bcw72 200 450 i c =10ma;i b = 0.5 ma 120 250 mv i c =50ma;i b =2.5ma 210 mv i c =10ma;i b =0.5ma 750 mv i c =50ma;i b =2.5ma 850 mv v be i c =2ma;v ce =5v 550 700 mv c c i e =ie=0;v cb =10v;f=1mhz 2.5 pf f t i c =10ma;v ce = 5 v; f = 100 mhz 100 mhz nf i c =200a;v ce =5v;r s =2k; f=1khz;b=200hz 10 db h fe i c =10a;v ce =5v parameter collector cutoff current emitter cutoff current dc current gain dc current gain noise figure collector-emitter saturation voltage base to emitter saturation voltage base to emitter voltage h fe i c =2ma;v ce =5v collector capacitance transition frequency v be(sat) v ce(sat) BCW71,bcw72 h fe classification type BCW71 bcw72 marking k1 k2 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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